Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
Identifieur interne : 00C188 ( Main/Repository ); précédent : 00C187; suivant : 00C189Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
Auteurs : RBID : Pascal:03-0315189Descripteurs français
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- 6865F, 7867D, 7860H, 6172L, 6837P, 6837H, 6630L, 6172F, Etude expérimentale, Indium composé, Semiconducteur III-V, Gallium composé, Semiconducteur bande interdite large, Puits quantique semiconducteur, Microscopie force atomique, Microscopie électronique balayage, Cathodoluminescence, Inclusion, Ségrégation, Contrainte interne, Diffusion(transport), Dislocation.
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Abstract
We have examined the nature of V-defects and inclusions embedded within these defects by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM)/cathodoluminescence (CL) in InGaN/GaN multiple quantum wells (MQWs). To date, indium distribution nonuniformity in the well or GaN barrier growth temperature have been identified as the main factors responsible for the V-defect occurrence and propagation. Further complicating the matter, inclusions embedded within V-defects originating at the first InGaN-to-GaN interface have been observed under certain growth conditions. Our AFM and high-resolution SEM/CL findings provide evidence that some V-defects occur merely as direct results of barrier temperature growth, and that there are additional V-defects associated with In-rich regions, which act as sinks for further indium segregation during the MQW growth. Both types of V-defects have a tendency of promoting inclusions at low-temperature (800°C) GaN barrier growth in an H2-free environment. Localized strain-energy variations associated with the apex of V-defects may be responsible for the inclusion occurrence. Adding H2 during the GaN barrier growth reduces V-defect formation and suppresses inclusion propagation entirely, rendering a uniform nanoscale CL signal. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire</title><author><name sortKey="Florescu, D I" uniqKey="Florescu D">D. I. Florescu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Physics Department, University of Central Florida, Florida 32816-2385</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Physics Department, University of Central Florida</wicri:cityArea></affiliation></author><author><name sortKey="Ting, S M" uniqKey="Ting S">S. M. Ting</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Ramer, J C" uniqKey="Ramer J">J. C. Ramer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Lee, D S" uniqKey="Lee D">D. S. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Merai, V N" uniqKey="Merai V">V. N Merai</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Parkeh, A" uniqKey="Parkeh A">A. Parkeh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Lu, D" uniqKey="Lu D">D. Lu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Armour, E A" uniqKey="Armour E">E. A. Armour</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author><author><name sortKey="Chernyak, L" uniqKey="Chernyak L">L. Chernyak</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>EMCORE Corporation, 145 Belmont Drive, Somerset</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0315189</idno><date when="2003-07-07">2003-07-07</date><idno type="stanalyst">PASCAL 03-0315189 AIP</idno><idno type="RBID">Pascal:03-0315189</idno><idno type="wicri:Area/Main/Corpus">00D028</idno><idno type="wicri:Area/Main/Repository">00C188</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Cathodoluminescence</term><term>Diffusion</term><term>Dislocations</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Inclusions</term><term>Indium compounds</term><term>Internal stresses</term><term>Scanning electron microscopy</term><term>Segregation</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865F</term><term>7867D</term><term>7860H</term><term>6172L</term><term>6837P</term><term>6837H</term><term>6630L</term><term>6172F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Gallium composé</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Microscopie force atomique</term><term>Microscopie électronique balayage</term><term>Cathodoluminescence</term><term>Inclusion</term><term>Ségrégation</term><term>Contrainte interne</term><term>Diffusion(transport)</term><term>Dislocation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have examined the nature of V-defects and inclusions embedded within these defects by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM)/cathodoluminescence (CL) in InGaN/GaN multiple quantum wells (MQWs). To date, indium distribution nonuniformity in the well or GaN barrier growth temperature have been identified as the main factors responsible for the V-defect occurrence and propagation. Further complicating the matter, inclusions embedded within V-defects originating at the first InGaN-to-GaN interface have been observed under certain growth conditions. Our AFM and high-resolution SEM/CL findings provide evidence that some V-defects occur merely as direct results of barrier temperature growth, and that there are additional V-defects associated with In-rich regions, which act as sinks for further indium segregation during the MQW growth. Both types of V-defects have a tendency of promoting inclusions at low-temperature (800°C) GaN barrier growth in an H<sub>2</sub>-free environment. Localized strain-energy variations associated with the apex of V-defects may be responsible for the inclusion occurrence. Adding H<sub>2</sub> during the GaN barrier growth reduces V-defect formation and suppresses inclusion propagation entirely, rendering a uniform nanoscale CL signal. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire</s1></fA08><fA11 i1="01" i2="1"><s1>FLORESCU (D. I.)</s1></fA11><fA11 i1="02" i2="1"><s1>TING (S. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>RAMER (J. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEE (D. S.)</s1></fA11><fA11 i1="05" i2="1"><s1>MERAI (V. N)</s1></fA11><fA11 i1="06" i2="1"><s1>PARKEH (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>LU (D.)</s1></fA11><fA11 i1="08" i2="1"><s1>ARMOUR (E. A.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHERNYAK (L.)</s1></fA11><fA14 i1="01"><s1>EMCORE Corporation, 145 Belmont Drive, Somerset, New Jersey 08873</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Department, University of Central Florida, Florida 32816-2385</s1></fA14><fA20><s1>33-35</s1></fA20><fA21><s1>2003-07-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0315189</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have examined the nature of V-defects and inclusions embedded within these defects by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM)/cathodoluminescence (CL) in InGaN/GaN multiple quantum wells (MQWs). To date, indium distribution nonuniformity in the well or GaN barrier growth temperature have been identified as the main factors responsible for the V-defect occurrence and propagation. Further complicating the matter, inclusions embedded within V-defects originating at the first InGaN-to-GaN interface have been observed under certain growth conditions. Our AFM and high-resolution SEM/CL findings provide evidence that some V-defects occur merely as direct results of barrier temperature growth, and that there are additional V-defects associated with In-rich regions, which act as sinks for further indium segregation during the MQW growth. Both types of V-defects have a tendency of promoting inclusions at low-temperature (800°C) GaN barrier growth in an H<sub>2</sub>-free environment. Localized strain-energy variations associated with the apex of V-defects may be responsible for the inclusion occurrence. Adding H<sub>2</sub> during the GaN barrier growth reduces V-defect formation and suppresses inclusion propagation entirely, rendering a uniform nanoscale CL signal. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H60H</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72L</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A16C</s0></fC02><fC02 i1="06" i2="3"><s0>001B60A16B</s0></fC02><fC02 i1="07" i2="3"><s0>001B60F30L</s0></fC02><fC02 i1="08" i2="3"><s0>001B60A72F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6865F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7860H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6172L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6837P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>6837H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>6630L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>6172F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Scanning electron microscopy</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Cathodoluminescence</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Cathodoluminescence</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Inclusion</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Inclusions</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Ségrégation</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Segregation</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Contrainte interne</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Internal stresses</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Diffusion(transport)</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Diffusion</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Dislocation</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Dislocations</s0></fC03><fN21><s1>209</s1></fN21><fN47 i1="01" i2="1"><s0>0326M000029</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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